s2a thru s2m www.vishay.com vishay general semiconductor revision: 22-mar-12 1 document number: 88712 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount glass passivated rectifier features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? low forward voltage drop ? low leakage current ? high forward surge capability ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in general purpose re ctification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. mechanical data case: do-214aa (smb) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compliant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 1.5 a v rrm 50 v to 1000 v i fsm 50 a i r 1.0 a v f 1.15 v t j max. 150 c do-214aa ( s mb) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol s2a s2b s2d s2g s2j s2k s2m unit device marking code sa sb sd sg sj sk sm maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current at t l = 100 c i f(av) 1.5 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 50 a operating and storage temperature range t j , t stg - 55 to + 150 c
s2a thru s2m www.vishay.com vishay general semiconductor revision: 22-mar-12 2 document number: 88712 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) thermal resistance from junction to ambient and from junction to lead mounted on p.c.b. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copp er pad areas note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol s2a s2b s2d s2g s2j s2k s2m unit maximum instantaneous forward voltage 1.5 a v f 1.15 v maximum dc reverse current at rated dc blocking voltage t a = 25 c i r 1.0 a t a = 125 c 125 typical reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 2.0 s typical junction capacitance 4.0 v, 1 mhz c j 16 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol s2a s2b s2d s2g s2j s2k s2m unit typical thermal resistance (1) r ? ja 53 c/w r ? jl 16 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode s2j-e3/52t 0.096 52t 750 7" diameter plastic tape and reel s2j-e3/5bt 0.096 5bt 3200 13" diameter plastic tape and reel s2jhe3/52t (1) 0.096 52t 750 7" diameter plastic tape and reel s2jhe3/5bt (1) 0.096 5bt 3200 13" diameter plastic tape and reel lead temperat u re (c) a v erage for w ard c u rrent (a) 1.50 50 70 90 110 130 150 0 0.50 1.00 resisti v e or ind u cti v e load 60 hz resisti v e or ind u cti v e load p. c . b . m o u nted 0.27" x 0.27" (7.0 mm x 7.0 mm) copper pad areas 1.75 0.75 1.25 0.25 n u m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 0 10 30 40 50 1 10 100 20 t l = 100 c 8 .3 ms single half sine-wa v e
s2a thru s2m www.vishay.com vishay general semiconductor revision: 22-mar-12 3 document number: 88712 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical junction capacitance fig. 6 - typical tran sient thermal impedance package outline dimensions in inches (millimeters) 0.01 0.1 1 10 0.3 0.5 0.7 0.9 1.1 1.3 instantaneo u s for w ard c u rrent (a) t j = 150 c t j = 125 c t j = 25 c instantaneo u s for w ard v oltage ( v ) 0.01 0.1 1 10 100 1000 0204060 8 0100 t j = 150 c t j = 125 c t j = 25 c instantaneo u s re v erse c u rrent (a) percent of rated peak re v erse v oltage (%) 1 10 100 0.1 1 10 100 j u nction capacitance (pf) re v erse v oltage ( v ) 10 100 1 0.01 1 100 0.1 10 t - p u lse d u ration (s) transient thermal impedance (c/w) cathode band do-214aa ( s mb) 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.084 (2.13) mountin g pa d layout 0.086 (2.18) min. 0.060 (1.52) min. 0.085 (2.159) max. 0.220 (5.59) ref.
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